In recent years,
ferroelectric materials and thin films have attracted much attention and exhibited
potential in many important applications such as dynamic random access memories
(DRAMS), non-volatile ferroelectric random access memories, actuators, infrared
Our scientific focus is on the ferroelectric and piezoelectric properties of
perovskite oxides and on transition-metal oxides. Experiments will be complemented
by atomic-level computer simulations focused on elucidating the relationship
between structure and ferroelectric properties in perovskites. The project is
based on the premise that comprehensive and fundamental materials modeling validated
by selected experiments can be used as an engineering tool for the development
of new materials and devices.
Fundamental properties of ferroelectric materials from first-principles calculations.
Atomic-level modeling and finite-temperature simulations of ferroelectric materials.
Synthesis and Characterization of ferroelectric thin films.
We are interested in:
- Ferroelectric materials for memory device applications (SrBi2Ta2O9 , etc.).
- Piezoelectric materials (PZT, PMN-PT, etc)
- Solid solutions and defect properties (KTaxNb1-xO3, SrxBa1-xTiO3, etc).
- Superlattices and heterostructures.
- Thin films and nanostructures.